History Recommend Products
    ODK (HK) Electronics Technology Co., Limited
    ODK (HK) Electronics Technology Co., Limited
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    Single IGBTs

    制造商 Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device 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    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    GT20N135SRA,S1E

    GT20N135SRA,S1E

    IGBT 1350V 40A TO247

    Toshiba Semiconductor and Storage

    1
    RFQ
    GT20N135SRA,S1E

    Datasheet

    - TO-247-3 Tube Active - 1350 V 40 A 80 A 2.4V @ 15V, 40A 312 W -, 700µJ (off) Standard 185 nC - 300V, 40A, 39Ohm, 15V - 175°C (TJ) - - Through Hole TO-247
    GT50J341,Q

    GT50J341,Q

    PB-F IGBT / TRANSISTOR TO-3PN IC

    Toshiba Semiconductor and Storage

    9,345
    RFQ
    GT50J341,Q

    Datasheet

    - TO-3P-3, SC-65-3 Tray Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 200 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
    GT50JR22(STA1,E,S)

    GT50JR22(STA1,E,S)

    PB-F IGBT / TRANSISTOR TO-3PN(OS

    Toshiba Semiconductor and Storage

    8,289
    RFQ
    GT50JR22(STA1,E,S)

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
    GT30J341,Q

    GT30J341,Q

    IGBT 600V 59A TO3P

    Toshiba Semiconductor and Storage

    5,884
    RFQ
    GT30J341,Q

    Datasheet

    - TO-3P-3, SC-65-3 Tray Last Time Buy - 600 V 59 A 120 A 2V @ 15V, 30A 230 W 800µJ (on), 600µJ (off) Standard - 80ns/280ns 300V, 30A, 24Ohm, 15V 50 ns 175°C (TJ) - - Through Hole TO-3P(N)
    GT10G131(TE12L,Q)

    GT10G131(TE12L,Q)

    IGBT 400V 1W 8-SOIC

    Toshiba Semiconductor and Storage

    3,282
    RFQ
    GT10G131(TE12L,Q)

    Datasheet

    - 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete - 400 V - 200 A 2.3V @ 4V, 200A 1 W - Standard - 3.1µs/2µs - - 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    GT10J312(Q)

    GT10J312(Q)

    IGBT 600V 10A 60W TO220SM

    Toshiba Semiconductor and Storage

    3,973
    RFQ
    GT10J312(Q)

    Datasheet

    - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete - 600 V 10 A 20 A 2.7V @ 15V, 10A 60 W - Standard - 400ns/400ns 300V, 10A, 100Ohm, 15V 200 ns 150°C (TJ) - - Through Hole -
    GT60N321(Q)

    GT60N321(Q)

    IGBT 1000V 60A 170W TO3P LH

    Toshiba Semiconductor and Storage

    8,017
    RFQ

    -

    - TO-3PL Tube Obsolete - 1000 V 60 A 120 A 2.8V @ 15V, 60A 170 W - Standard - 330ns/700ns - 2.5 µs 150°C (TJ) - - Through Hole TO-3P(LH)
    GT8G133(TE12L,Q)

    GT8G133(TE12L,Q)

    IGBT 400V 600MW 8TSSOP

    Toshiba Semiconductor and Storage

    2,169
    RFQ
    GT8G133(TE12L,Q)

    Datasheet

    - 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete - 400 V - 150 A 2.9V @ 4V, 150A 600 mW - Standard - 1.7µs/2µs - - 150°C (TJ) - - Surface Mount 8-TSSOP
    GT50J121(Q)

    GT50J121(Q)

    IGBT 600V 50A 240W TO3P LH

    Toshiba Semiconductor and Storage

    8,794
    RFQ

    -

    - TO-3PL Tube Obsolete - 600 V 50 A 100 A 2.45V @ 15V, 50A 240 W 1.3mJ (on), 1.34mJ (off) Standard - 90ns/300ns 300V, 50A, 13Ohm, 15V - 150°C (TJ) - - Through Hole TO-3P(LH)
    Total 19 Record«Prev12Next»
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