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    ODK (HK) Electronics Technology Co., Limited
    ODK (HK) Electronics Technology Co., Limited
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    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    EPC2106

    EPC2106

    MOSFET 2N-CH 100V 1.7A DIE

    EPC

    59,446
    RFQ
    EPC2106

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 1.7A 70mOhm @ 2A, 5V 2.5V @ 600µA 0.73nC @ 5V 75pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2103

    EPC2103

    MOSFET 2N-CH 80V 28A DIE

    EPC

    5,410
    RFQ
    EPC2103

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 28A 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2107

    EPC2107

    MOSFET 3N-CH 100V 9BGA

    EPC

    5,182
    RFQ
    EPC2107

    Datasheet

    eGaN® 9-VFBGA Tape & Reel (TR) Active GaNFET (Gallium Nitride) 3 N-Channel (Half Bridge + Synchronous Bootstrap) - 100V 1.7A, 500mA 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.16nC @ 5V, 0.044nC @ 5V 16pF @ 50V, 7pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount 9-BGA (1.35x1.35)
    EPC2110

    EPC2110

    MOSFET 2N-CH 120V 3.4A DIE

    EPC

    12,304
    RFQ
    EPC2110

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 120V 3.4A 60mOhm @ 4A, 5V 2.5V @ 700µA 0.8nC @ 5V 80pF @ 60V - -40°C ~ 150°C (TJ) - - - Die
    EPC2221

    EPC2221

    MOSFET 2N-CH 100V 5A DIE

    EPC

    4,063
    RFQ
    EPC2221

    Datasheet

    - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Dual) Common Source - 100V 5A - - - - - 150°C (TJ) - - Surface Mount Die
    EPC2111

    EPC2111

    MOSFET 2N-CH 30V 16A DIE

    EPC

    19,151
    RFQ
    EPC2111

    Datasheet

    - Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 16A (Ta) 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V 2.5V @ 5mA 2.2nC @ 5V, 5.7nC @ 5V 230pF @ 15V, 590pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2104

    EPC2104

    MOSFET 2N-CH 100V 23A DIE

    EPC

    3,154
    RFQ
    EPC2104

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 100V 23A 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2102

    EPC2102

    MOSFET 2N-CH 60V 23A DIE

    EPC

    3,505
    RFQ
    EPC2102

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 23A 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2105

    EPC2105

    MOSFET 2N-CH 80V 9.5A/38A DIE

    EPC

    1,410
    RFQ
    EPC2105

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 9.5A, 38A 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V 2.5V @ 2.5mA, 2.5V @ 10mA 2.5nC @ 5V, 10nC @ 5V 300pF @ 40V, 1100pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2101

    EPC2101

    MOSFET 2N-CH 60V 9.5A/38A DIE

    EPC

    469
    RFQ
    EPC2101

    Datasheet

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 9.5A, 38A 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    Total 20 Record«Prev12Next»
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